n-channel enhancement mode mosfet copyright ? anpec electronics corp. rev. a.1 - oct., 2003 apm3040n www.anpec.com.tw 1 anpec reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. package code d : so t-89 operating junction temp. range c : -55 to 125 c handling code tr : tape & reel apm3040n handling code temp. range package code xxxxx - date code apm3040n d : apm3040n xxxxx pin description ordering and marking information features applications ? power management in notebook computer. ? portable equipment and battery powered systems. absolute maximum ratings (t a = 25 c unless otherwise noted) symbol parameter rating unit v dss drain-source voltage 30 v gss gate-source voltage 12 v i d maximum drain current ? continuous 4.5 i dm maximum pulsed drain current ( pulse width 300 s) 20 a ? 30v/4.5a, r ds(on) =31m ? (typ.) @ v gs =10v r ds(on) =35m ? (typ.) @ v gs =4.5v r ds(on) =55m ? (typ.) @ v gs =2.5v ? ? ? ? ? super high dense cell design for extremely ? ? ? ? ? high power and current handling capability ? ? ? ? ? sot-89 package gd s 123 top view of sot-89 g s d n-channel mosfet
copyright ? anpec electronics corp. rev. a.1 - oct., 2003 apm3040n www.anpec.com.tw 2 apm3040n symbol parameter test condition min. typ. max. unit static bv dss drain-source breakdown voltage v gs =0v, i ds =250 a 30 v i dss zero gate voltage drain current v ds =24v, v gs =0v 1 a v gs(th) gate threshold voltage v ds =v gs , i ds =250 a 0.6 0.75 1.5 v i gss gate leakage current v gs = 12v, v ds =0v 100 na v gs =10v, i ds =3a 31 40 v gs =4.5v, i ds =1.5a 35 50 r ds(on) a drain-source on-state resistance v gs =2.5v, i ds =0.5a 55 70 m ? v sd a diode forward voltage i sd =0.5a, v gs =0v 0.7 1.3 v dynamic b q g total gate charge 9.2 13 q gs gate-source charge 2.5 q gd gate-drain charge v ds =10v, v gs =4.5v, i ds =3a 2 nc t d(on) turn-on delay time 11 22 t r turn-on rise time 17 32 t d(off) turn-off delay time 37 68 t f turn-off fall time v dd =15v,i d =3a, v gs =10v, r g =6 ? 20 38 ns c iss input capacitance 426 c oss output capacitance 80 c rss reverse transfer v gs =0v v ds =25v frequency=1.0mhz 39 pf notes: a : pulse test; pulse width 300 s, duty cycle 2%. b : guaranteed by design, not subject to production testing. absolute maximum ratings (cont.) (t a = 25 c unless otherwise noted) symbol parameter rating unit t a =25c 1.4 p d maximum power dissipation t a =100c 0.5 w t j maximum junction temperature 150 c t stg storage temperature range -55 to 150 c r ja thermal resistance ? junction to ambient 85 c/w electrical characteristics (t a = 25 c unless otherwise noted)
copyright ? anpec electronics corp. rev. a.1 - oct., 2003 apm3040n www.anpec.com.tw 3 typical characteristics i d- drain current (a) transfer characteristics v gs - gate-to-source voltage (v) v ds - drain-to-source voltage (v) output characteristics i d -drain current (a) threshold voltage vs. temperature tj - junction temperature (c) v gs(th)- threshold voltage (v) (normalzed) r ds (on)-on-resistance ( ? ) on-resistance vs. drain current i d - drain current (a) -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds =250 a 012345678910 0 2 4 6 8 10 12 14 16 18 20 v gs =1.5v v gs =2v v gs =3,4,5,6,7,8,9,10v 0246810 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 v gs =10v v gs =4.5v v gs =2.5v 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 0 2 4 6 8 10 12 14 16 18 20 t j =-55 o c t j =25 o c t j =125 o c
copyright ? anpec electronics corp. rev. a.1 - oct., 2003 apm3040n www.anpec.com.tw 4 -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r on @t j = 25 c: 31m ? v gs = 10v i ds = 3a typical characteristics v gs - gate-to-source voltage (v) r ds (on)-on-resistance ( ? ) on-resistance vs. gate-to-source voltage r ds (on)-on-resistance (normalized) on-resistance vs. junction temperature t j - junction temperature (c) gate charge q g - gate charge (nc) v gs -gate-source voltage (v) capacitance (pf) capacitance v ds - drain-to-source voltage (v) 0 5 10 15 20 25 30 0 100 200 300 400 500 600 frequency=1mhz crss coss ciss 012345678910 0.020 0.025 0.030 0.035 0.040 0.045 0.050 0.055 i d =3a 0246810 0 1 2 3 4 5 v ds = 10 v i d = 3 a
copyright ? anpec electronics corp. rev. a.1 - oct., 2003 apm3040n www.anpec.com.tw 5 typical characteristics source-drain diode forward voltage i s -source current (a) v sd -source-to-drain voltage (v) power (w) single pulse power time (sec) normalized thermal transient impedence, junction to ambient normalized effective transient thermal impedance square wave pulse duration (sec) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 20 t j =150 o c t j =25 o c 1e-4 1e-3 0.01 0.1 1 10 100 300 1e-3 0.01 0.1 1 2 d=0.01 p dm t 1 t 2 d=0.02 d=0.05 d=0.1 d=0.2 duty cycle=0.5 single pulse 1.duty cycle, d= t1/t2 2.per unit base=r thja =85 o c/w 3.t jm -t a =p dm z thja 4.surface mounted 1e-4 1e-3 0.01 0.1 1 10 100300 0 50 100 150 200 250
copyright ? anpec electronics corp. rev. a.1 - oct., 2003 apm3040n www.anpec.com.tw 6 d d1 e b1 e1 b 12 3 l h e c a a a sot-89 (reference eiaj ed-7500a reg stration sc-62) millimeters inches dim min. max. min. max. a 1.40 1.60 0.055 0.063 b 0.40 0.56 0.016 0.022 b1 0.35 0.48 0.014 0.019 c 0.35 0.44 0.014 0.017 d 4.40 4.60 0.173 0.181 d1 1.35 1.83 0.053 0.072 e 1.50 bsc 0.059 bsc e1 3.00 bsc 0.118 bsc e 2.29 2.60 0.090 0.102 h 3.75 4.25 0.148 0.167 l 0.80 1.20 0.031 0.047 10 10 package information
copyright ? anpec electronics corp. rev. a.1 - oct., 2003 apm3040n www.anpec.com.tw 7 reference jedec standard j-std-020a april 1999 reflow condition (ir/convection or vpr reflow) physical specifications pre-heat temperature 183 c peak temperature time temperature classification reflow profiles convection or ir/ convection vpr average ramp-up rate(183 c to peak) 3 c/second max. 10 c /second max. preheat temperature 125 25 c) 120 seconds max temperature maintained above 183 c 60 ? 150 seconds time within 5 c of actual peak temperature 10 ?20 seconds 60 seconds peak temperature range 220 +5/-0 c or 235 +5/-0 c 215-219 c or 235 +5/-0 c ramp-down rate 6 c /second max. 10 c /second max. time 25 c to peak temperature 6 minutes max. package reflow conditions pkg. thickness 2.5mm and all bgas pkg. thickness < 2.5mm and pkg. volume 350 mm3 pkg. thickness < 2.5mm and pkg. volume < 350mm3 convection 220 +5/-0 c convection 235 +5/-0 c vpr 215-219 c vpr 235 +5/-0 c ir/convection 220 +5/-0 c ir/convection 235 +5/-0 c terminal material solder-plated copper (solder material : 90/10 or 63/37 snpb) lead solderability meets eia specification rsi86-91, ansi/j-std-002 category 3.
copyright ? anpec electronics corp. rev. a.1 - oct., 2003 apm3040n www.anpec.com.tw 8 r eliability test program test item method description solderability mil-std-883d-2003 245 c , 5 sec holt mil-std-883d-1005.7 1000 hrs bias @ 125 c pct jesd-22-b, a102 168 hrs, 100 % rh , 121 c tst mil-std-883d-1011.9 -65 c ~ 150 c, 200 cycles esd mil-std-883d-3015.7 vhbm > 2kv, vmm > 200v latch-u p jesd 78 10m s , i tr > 100ma carrier tape a j b t2 t1 c t ao e w po p ko bo d1 d f p1
copyright ? anpec electronics corp. rev. a.1 - oct., 2003 apm3040n www.anpec.com.tw 9 application a b c j t1 t2 w p e 178 1 70 2 13.5 0.15 3 0.15 14 2 1.3 0.3 12 + 0.3 12 - 0.1 8 0.1 1.75 0.1 f d d1 po p1 ao bo ko t sot-89 5.5 0.05 1.5 0.1 1.5 0.1 4.0 0.1 2.0 0.1 4.8 0.1 4.5 0.1 1.80 0.1 0.3 0.013 application carrier width cover tape width devices per reel sot- 89 12 9.3 1000 cover tape dimensions customer service anpec electronics corp. head office : 5f, no. 2 li-hsin road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 7f, no. 137, lane 235, pac chiao rd., hsin tien city, taipei hsien, taiwan, r. o. c. tel : 886-2-89191368 fax : 886-2-89191369
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